Mohammed-Brahim T, Zanat K, Hafdallah A, Aida MS, Mahdjoubi L and Ayed H*
Thin films of microcrystalline silicon (μc-Si) were deposited by (LPCVD: Low Pression Chemical Vapour Deposition) to realise Au-μcSi Schottky diodes which are powerful devices to determine several μc-Si characteristic parameters which are never obtained with simple layers without serious difficulties. Therefore, good quality Schottky devices have been successfully made and present an excellent reproducibility. The current voltage (I-V) characteristics of these devices have given an ideality factor (n) in the range (1.5-2) and a barrier height Ф(I-V) between 0.63 and 0.97eV. This last parameter was found lower than the barrier height Ф(C-V) deduced from the capacitance-voltage characteristics (C-2-V). This difference is attributed to the existence of insulated interface layer as several other authors.
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